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Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures

Yang Jinghai, Yang Lili, Zhang Yongjun, Liu Wenyan, Wang Dandan, Lang Jihui and Zhao Qingxiang

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Abstract: The optical transition energy in GaInNAs/GaAs QW structures is investigated from theoretical and experimental aspects.The discrete-level energy and the band-gap energy are calculated using the effective-mass approximation and two-level repulsion model,respectively.The changes in the band-gap energy due to strains are also discussed.The theoretical and experimental transition energies of GaInNAs/GaAs quantum well structures are compared,and they agree well.The effect of N on the transition energies of GaInNAs/GaAs quantum well structures is analyzed simply

Key words: quantum well, optical transition energy, effective-mass approximation, molecular-beam epitaxy

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    Received: 18 August 2015 Revised: Online: Published: 01 November 2006

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      Article Navigation >  Journal of Semiconductors  > 2006  >  27(11): 1945-1949
      Yang Jinghai, Yang Lili, Zhang Yongjun, Liu Wenyan, Wang Dandan, Lang Jihui, Zhao Qingxiang. Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures[J]. Journal of Semiconductors, 2006, 27(11): 1945-1949. ****Yang J H, Yang L L, Zhang Y J, Liu W Y, Wang Dandan, Lang J H, Zhao Q X. Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures[J]. Chin. J. Semicond., 2006, 27(11): 1945.
      Citation:
      Yang Jinghai, Yang Lili, Zhang Yongjun, Liu Wenyan, Wang Dandan, Lang Jihui, Zhao Qingxiang. Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures[J]. Journal of Semiconductors, 2006, 27(11): 1945-1949. ****
      Yang J H, Yang L L, Zhang Y J, Liu W Y, Wang Dandan, Lang J H, Zhao Q X. Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures[J]. Chin. J. Semicond., 2006, 27(11): 1945.
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      Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures

      • Institute of Condensed State Physics,Jilin Normal University,Siping 136000,China，Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China

      • Institute of Condensed State Physics,Jilin Normal University,Siping 136000,China，Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China

      • Institute of Condensed State Physics,Jilin Normal University,Siping 136000,China

      • Institute of Condensed State Physics,Jilin Normal University,Siping 136000,China

      • Institute of Condensed State Physics,Jilin Normal University,Siping 136000,China

      • Institute of Condensed State Physics,Jilin Normal University,Siping 136000,China

      • Department of Physics,Chalmers University of Technology,Gteborg SE-41296,Sweden

      • Received Date: 2015-08-18

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