Citation: |
Pu Hongbin, Chen Zhiming. Turn-On Mechanism of a Light-Activated SiC Heterojuntion Darlington HBT[J]. Journal of Semiconductors, 2005, 26(S1): 143-146.
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Pu H B, Chen Z M. Turn-On Mechanism of a Light-Activated SiC Heterojuntion Darlington HBT[J]. Chin. J. Semicond., 2005, 26(13): 143.
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Turn-On Mechanism of a Light-Activated SiC Heterojuntion Darlington HBT
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Abstract
A novel light-activated Darlington heterojuntion transistor power switch which is made of narrow bandgap ternary SiCGe alloys and SiC is proposed in which SiCGe/SiC pn heterojunction is employed to produce a base current by means of optical illumination.By using two-dimensional numerical simulation,performance of the novel light-activated power switch is simulated.It is shown that the light-activated device has very good switching characteristics for a infrared triggering light,and the forward voltage drop is about 4.5V during condition of saturation turn-on,and the switch is well suited for high light power. -
References
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