Chin. J. Semicond. > 1989, Volume 10 > Issue 4 > 313-316
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光电化学法测定硅中少子扩散长度

骆茂民 and 彭瑞伍

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(4): 313-316
      骆茂民, 彭瑞伍. 光电化学法测定硅中少子扩散长度[J]. 半导体学报(英文版), 1989, 10(4): 313-316.
      Citation:
      骆茂民, 彭瑞伍. 光电化学法测定硅中少子扩散长度[J]. 半导体学报(英文版), 1989, 10(4): 313-316.
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      • Received Date: 2015-08-19

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