Chin. J. Semicond. > 1988, Volume 9 > Issue 2 > 205-207
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H、F、Cl/Si(111)化学吸附的半经验CNDO法研究

吴汲安

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(2): 205-207
      吴汲安. H、F、Cl/Si(111)化学吸附的半经验CNDO法研究[J]. 半导体学报(英文版), 1988, 9(2): 205-207.
      Citation:
      吴汲安. H、F、Cl/Si(111)化学吸附的半经验CNDO法研究[J]. 半导体学报(英文版), 1988, 9(2): 205-207.
      shu

      • Received Date: 2015-08-19

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