Chin. J. Semicond. > 2003, Volume 24 > Issue 6 > 598-601
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重掺直拉硅对重金属Cr的内吸杂能力

余学功 , 杨德仁 , 马向阳 , 杨建松 and 阙端麟

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Key words: 重掺直拉硅, 氧沉淀, 内吸杂

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(6): 598-601
      余学功, 杨德仁, 马向阳, 杨建松, 阙端麟. 重掺直拉硅对重金属Cr的内吸杂能力[J]. 半导体学报(英文版), 2003, 24(6): 598-601.
      Citation:
      余学功, 杨德仁, 马向阳, 杨建松, 阙端麟. 重掺直拉硅对重金属Cr的内吸杂能力[J]. 半导体学报(英文版), 2003, 24(6): 598-601.
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      • Received Date: 2015-08-20

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