| Citation: |
He Yuliang, Shi Yi. Improving Characters of silicon devices Using by nc-si= H Films[J]. Journal of Semiconductors, 2003, 24(S1): 192-197.
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He Y L, Shi Y. Improving Characters of silicon devices Using by nc-si= H Films[J]. Chin. J. Semicond., 2003, 24(S1): 192.
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Improving Characters of silicon devices Using by nc-si= H Films
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Abstract
The nanocrystalline silicon films ( nc-Si= D by PECVD method possess a series of novel properties. With the nc-Si = film depositiod on the opposite type of single silicon ( c-SiD wafers nc-Si/ c-Si heterojunclion diodes are fabricated. It is found there are a lot of unique features which are no exist in common silicon diodes. The possibility of other silicon devices fabricated by nc-Si= films such as Schottky diodes TFT transistors and so on is discussed.-
Keywords:
- nanocrystalline silicon films,
- diodes,
- silicon devices
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References
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Proportional views
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