Chin. J. Semicond. > 1999, Volume 20 > Issue 10 > 882-887
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带有非应变盖层的应变外延层的稳定性

金智 , 杨树人 , 安海岩 , 马春生 , 王本忠 and 刘式墉

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(10): 882-887
      金智, 杨树人, 安海岩, 马春生, 王本忠, 刘式墉. 带有非应变盖层的应变外延层的稳定性[J]. 半导体学报(英文版), 1999, 20(10): 882-887.
      Citation:
      金智, 杨树人, 安海岩, 马春生, 王本忠, 刘式墉. 带有非应变盖层的应变外延层的稳定性[J]. 半导体学报(英文版), 1999, 20(10): 882-887.
      shu

      • Received Date: 2015-08-19

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