| Citation: |
Ma Ping, Duan Yao, Wei Tongbo, Duan Ruifei, Wang Junxi, Zeng Yiping, Li Jinmin. Theoretical Simulation of Vertical HVPE Reactor and GaN Thick Film Growth[J]. Journal of Semiconductors, 2007, 28(S1): 253-256.
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Ma P, Duan Y, Wei T B, Duan R F, Wang J X, Zeng Y P, Li J M. Theoretical Simulation of Vertical HVPE Reactor and GaN Thick Film Growth[J]. Chin. J. Semicond., 2007, 28(S1): 253.
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Theoretical Simulation of Vertical HVPE Reactor and GaN Thick Film Growth
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Abstract
According to the model of fluid dynamic，distribution of gas concentration，as well as the thermal field，in the reactor was simulated.NH3 concentration distributes homogeneously around the substrate，while GaCl concentration is larger in center than that in the periphery.The experimental results show that the growth rate is 260 um/h in center and 140pm/h in the periphery，respectively.The FWHM is 141”.It is O impurity that arouses the strong yellow uminescence.-
Keywords:
- HVPE,
- theoretical simulation,
- GaN
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References
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Proportional views
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