Chin. J. Semicond. > 2002, Volume 23 > Issue 4 > 434-439
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硅在KOH中各向异性腐蚀的物理模型

姜岩峰 , 黄庆安 , 吴文刚 , 郝一龙 and 杨振川

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Key words: 各向异性腐蚀, 激活能, 腐蚀速率

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(4): 434-439
      姜岩峰, 黄庆安, 吴文刚, 郝一龙, 杨振川. 硅在KOH中各向异性腐蚀的物理模型[J]. 半导体学报(英文版), 2002, 23(4): 434-439.
      Citation:
      姜岩峰, 黄庆安, 吴文刚, 郝一龙, 杨振川. 硅在KOH中各向异性腐蚀的物理模型[J]. 半导体学报(英文版), 2002, 23(4): 434-439.
      shu

      • Received Date: 2015-08-19

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