Chin. J. Semicond. > 2003, Volume 24 > Issue 2 > 153-156
|

CONTENTS

氢气退火对大直径直拉硅单晶中空洞型缺陷的影响

余学功 , 杨德仁 , 马向阳 , 李红 and 阙端麟

+ Author Affiliations

PDF

Key words: 氢退火, 空洞型缺陷, 氧外扩散

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2643 Times PDF downloads: 1285 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 February 2003

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2003  >  24(2): 153-156
      余学功, 杨德仁, 马向阳, 李红, 阙端麟. 氢气退火对大直径直拉硅单晶中空洞型缺陷的影响[J]. 半导体学报(英文版), 2003, 24(2): 153-156.
      Citation:
      余学功, 杨德仁, 马向阳, 李红, 阙端麟. 氢气退火对大直径直拉硅单晶中空洞型缺陷的影响[J]. 半导体学报(英文版), 2003, 24(2): 153-156.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return