Chin. J. Semicond. > 1996, Volume 17 > Issue 3 > 227-230
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GaAs脊形量子线结构的MBE生长机理研究

牛智川，周增圻，林耀望，周帆，潘昆，张子莹，祝亚芹，王守武

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    Received: 18 August 2015 Revised: Online: Published: 01 March 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(3): 227-230
      牛智川，周增圻，林耀望，周帆，潘昆，张子莹，祝亚芹，王守武. GaAs脊形量子线结构的MBE生长机理研究[J]. 半导体学报(英文版), 1996, 17(3): 227-230.
      Citation:
      牛智川，周增圻，林耀望，周帆，潘昆，张子莹，祝亚芹，王守武. GaAs脊形量子线结构的MBE生长机理研究[J]. 半导体学报(英文版), 1996, 17(3): 227-230.
      shu

      • Received Date: 2015-08-18

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