| Citation: |
Huang Beiju, Chen Hongda, 刘金彬, Liu Jinbin, Gu Ming. A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor[J]. Journal of Semiconductors, 2006, 27(12): 2089-2093.
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Huang B J, Chen H D, Liu J B, Gu M. A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor[J]. Chin. J. Semicond., 2006, 27(12): 2089.
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A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor
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Abstract
We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOI).Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure,which boosts the modulation efficiency compared with a single MOS capacitor.The simulation results demonstrate that the VπLπ product is 2.4V·cm.The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve,respectively,indicating a bandwidth of 8GHz.The phase shift efficiency and bandwidth can be enhanced by rib width scaling. -
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