| Citation: |
Cheng Zhiqun, Zhou Xiaopeng, Chen J Kevin. Low Noise Distributed Amplifiers Using a Novel Composite-Channel GaN HEMTs[J]. Journal of Semiconductors, 2008, 29(12): 2297-2300.
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Cheng Z Q, Zhou X P, Chen J K. Low Noise Distributed Amplifiers Using a Novel Composite-Channel GaN HEMTs[J]. J. Semicond., 2008, 29(12): 2297.
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Low Noise Distributed Amplifiers Using a Novel Composite-Channel GaN HEMTs
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Abstract
Low noise distributed amplifiers (DAs) using the novel low noise composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs (CC-HEMTs) with 1μm-gate-length are designed and fabricated.Simulated and measured results of the DAs are characterized.The measured results show that the low noise DAs have input and output VSWR (voltage standing wave ratio) of less than 2.0,associated gain of more than 7.0dB and gain ripple of less than 1dB in the frequency range from 2 to 10GHz.Noise figure of the DAs is less than 5dB in the frequency range from 2 to 6GHz,and less than 6.5dB in the frequency range from 2 to 10GHz.The measured results agree well with the simulated ones.-
Keywords:
- low noise,
- distributed amplifiers,
- composite-channel,
- GaN HEMTs
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References
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