Chin. J. Semicond. > 1997, Volume 18 > Issue 7 > 554-557
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流体静压下研究电场畴的形成机制

孙宝权 , 刘振兴 and 江德生

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(7): 554-557
      孙宝权, 刘振兴, 江德生. 流体静压下研究电场畴的形成机制[J]. 半导体学报(英文版), 1997, 18(7): 554-557.
      Citation:
      孙宝权, 刘振兴, 江德生. 流体静压下研究电场畴的形成机制[J]. 半导体学报(英文版), 1997, 18(7): 554-557.
      shu

      • Received Date: 2015-08-19

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