Chin. J. Semicond. > 1997, Volume 18 > Issue 12 > 912-915
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硅微波功率器件二次发射极镇流研究

王因生 , 林金庭 and 张树丹

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(12): 912-915
      王因生, 林金庭, 张树丹. 硅微波功率器件二次发射极镇流研究[J]. 半导体学报(英文版), 1997, 18(12): 912-915.
      Citation:
      王因生, 林金庭, 张树丹. 硅微波功率器件二次发射极镇流研究[J]. 半导体学报(英文版), 1997, 18(12): 912-915.
      shu

      • Received Date: 2015-08-19

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