| Citation: |
Zhang Yueli, Zhang Wenjun. Analysis Design and Optimization of Si Inductors[J]. Journal of Semiconductors, 2005, 26(S1): 268-272.
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Zhang Y L, Zhang W J. Analysis Design and Optimization of Si Inductors[J]. Chin. J. Semicond., 2005, 26(13): 268.
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Analysis Design and Optimization of Si Inductors
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Abstract
Si integrated inductors are simulated with the tool ISE-EMLAB which supports FDTD(finite-difference time-domain) method.The effects on the frequency feature of the quality factor,inductance, and resistance brought by the change of the design parameters such as the metal width,metal space,outer diameter, and the number turns are analyzed.Then,we get a principle of design and optimization of the Si integrated inductors.-
Keywords:
- FDTD,
- quality factor,
- inductance,
- resistance,
- design parameters
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References
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Proportional views
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