Chin. J. Semicond. > 1995, Volume 16 > Issue 3 > 235-240

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采用SiO_2／Si系扩镓提高扩散质量和器件性能的研究

刘秀喜，赵富贤，薛成山，孙瑛，华士奎

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(3): 235-240
      刘秀喜，赵富贤，薛成山，孙瑛，华士奎. 采用SiO_2／Si系扩镓提高扩散质量和器件性能的研究[J]. 半导体学报(英文版), 1995, 16(3): 235-240.
      Citation:
      刘秀喜，赵富贤，薛成山，孙瑛，华士奎. 采用SiO_2／Si系扩镓提高扩散质量和器件性能的研究[J]. 半导体学报(英文版), 1995, 16(3): 235-240.
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      • Received Date: 2015-08-19

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