Chin. J. Semicond. > 2002, Volume 23 > Issue 4 > 367-372
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超薄氧化层中的中性陷阱对隧穿电流的影响和应变诱导漏电流(英文)

张贺秋 , 毛凌锋 , 许铭真 and 谭长华

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Key words: 隧穿电流, 高场应力, 超薄, 应变诱导漏电流

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(4): 367-372
      张贺秋, 毛凌锋, 许铭真, 谭长华. 超薄氧化层中的中性陷阱对隧穿电流的影响和应变诱导漏电流(英文)[J]. 半导体学报(英文版), 2002, 23(4): 367-372.
      Citation:
      张贺秋, 毛凌锋, 许铭真, 谭长华. 超薄氧化层中的中性陷阱对隧穿电流的影响和应变诱导漏电流(英文)[J]. 半导体学报(英文版), 2002, 23(4): 367-372.
      shu

      • Received Date: 2015-08-19

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