Chin. J. Semicond. > 1990, Volume 11 > Issue 8 > 615-622
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氮气氛下衬底负偏压预溅射对GaAs肖特基势垒性能的改善

张利春 , 高玉芝 , 宁宝俊 , 张录 and 王阳元

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(8): 615-622
      张利春, 高玉芝, 宁宝俊, 张录, 王阳元. 氮气氛下衬底负偏压预溅射对GaAs肖特基势垒性能的改善[J]. 半导体学报(英文版), 1990, 11(8): 615-622.
      Citation:
      张利春, 高玉芝, 宁宝俊, 张录, 王阳元. 氮气氛下衬底负偏压预溅射对GaAs肖特基势垒性能的改善[J]. 半导体学报(英文版), 1990, 11(8): 615-622.
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      • Received Date: 2015-08-19

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