Chin. J. Semicond. > 1989, Volume 10 > Issue 11 > 846-852
|

CONTENTS

离子束混合诱导稀土金属Ce与Si的界面反应及硅化物的形成

杨熙宏 , 毛思宁 , 陈坚 , 刘家瑞 , 杨锋 and 许天冰

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2788 Times PDF downloads: 862 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 November 1989

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1989  >  10(11): 846-852
      杨熙宏, 毛思宁, 陈坚, 刘家瑞, 杨锋, 许天冰. 离子束混合诱导稀土金属Ce与Si的界面反应及硅化物的形成[J]. 半导体学报(英文版), 1989, 10(11): 846-852.
      Citation:
      杨熙宏, 毛思宁, 陈坚, 刘家瑞, 杨锋, 许天冰. 离子束混合诱导稀土金属Ce与Si的界面反应及硅化物的形成[J]. 半导体学报(英文版), 1989, 10(11): 846-852.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return