Chin. J. Semicond. > 1986, Volume 7 > Issue 6 > 612-616
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影响Ar~+激光再结晶多晶硅/二氧化硅界面性质的因素

黄信凡 , 鲍希茂 , 蒋锡平 , 文婧 and 褚一鸣

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(6): 612-616
      黄信凡, 鲍希茂, 蒋锡平, 文婧, 褚一鸣. 影响Ar~+激光再结晶多晶硅/二氧化硅界面性质的因素[J]. 半导体学报(英文版), 1986, 7(6): 612-616.
      Citation:
      黄信凡, 鲍希茂, 蒋锡平, 文婧, 褚一鸣. 影响Ar~+激光再结晶多晶硅/二氧化硅界面性质的因素[J]. 半导体学报(英文版), 1986, 7(6): 612-616.
      shu

      • Received Date: 2015-08-20

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