| Citation: |
Ge Ji, Jin Zhi, Liu Xinyu, Cheng Wei, Wang Xiantai, Chen Gaopeng, Wu Dexin. A SDD Model of Ultra High-Speed InP-Based SHBTs Including Improved Impact Ionization[J]. Journal of Semiconductors, 2008, 29(9): 1799-1803.
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Ge J, Jin Z, Liu X Y, Cheng W, Wang X T, Chen G P, Wu D X. A SDD Model of Ultra High-Speed InP-Based SHBTs Including Improved Impact Ionization[J]. J. Semicond., 2008, 29(9): 1799.
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A SDD Model of Ultra High-Speed InP-Based SHBTs Including Improved Impact Ionization
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Abstract
This paper investigates the relationship between the impact ionization and temperature in ultra high-speed InP-based SHBTs.Considering the effect of temperature,an improved equation of the multiplication factor for InP-based HBTs is derived at an approximation of the electric field.A new SDD model including impact ionization and self-heating effects is developed for ultra high-speed InP-based SHBTs.The simulation result is consistent with the experimental data,indicating the accurate predictions of the model. -
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