Chin. J. Semicond. > 1984, Volume 5 > Issue 5 > 573-576

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用离子注入~(31)P~+制造光掩模

刘风岐 , 牛文志 , 李少海 and 李浩

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(5): 573-576
      刘风岐, 牛文志, 李少海, 李浩. 用离子注入~(31)P~+制造光掩模[J]. 半导体学报(英文版), 1984, 5(5): 573-576.
      Citation:
      刘风岐, 牛文志, 李少海, 李浩. 用离子注入~(31)P~+制造光掩模[J]. 半导体学报(英文版), 1984, 5(5): 573-576.
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      • Received Date: 2015-08-20

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