PAPERS
Yu Huiyong, Zhao Youwen, Zhan Rong, Gao Yongliang and Hui Feng
Abstract: Micro-defects and properties of Si-doped,low resistivity GaAs single crystal grown by the vertical gradient freeze (VGF) method are studied and compared with undoped semi-insulating GaAs grown by VGF and liquid encapsulated Czochralski-grown (LEC) methods.Using the A-B etching microscopy method,micro-precipitated defects in the two materials are compared and their formation mechanism is analyzed.Lattice occupation of Si and B atoms and their complex defects are investigated by photoluminescence spectroscopy.Hall measurement results indicate that there is a strong Si self-compensation in the low resistive Si-doped VGF-GaAs single crystal,resulting in a reduction of n-type doping efficiency.As a result,a high initial doping concentration of Si is used in the process of VGF growth of n-type GaAs,and a large amount of impurity precipitate is formed.This situation is enhanced when a high concentration of B in the VGF grown GaAs exists.An approach to reduce defects and increase doping efficiency is discussed.
Key words: VGF, GaAs, micro-defect, single crystal
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Received: 18 August 2015 Revised: 19 May 2008 Online: Published: 01 September 2008
| Citation: |
Yu Huiyong, Zhao Youwen, Zhan Rong, Gao Yongliang, Hui Feng. Defects and Properties of Low Dislocation Si-Doped GaAs Single Crystal Grown by the VGF Method[J]. Journal of Semiconductors, 2008, 29(9): 1775-1778.
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Yu H Y, Zhao Y W, Zhan R, Gao Y L, Hui F. Defects and Properties of Low Dislocation Si-Doped GaAs Single Crystal Grown by the VGF Method[J]. J. Semicond., 2008, 29(9): 1775.
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