| Citation: |
Zhang Rui, Zhang Fan, Zhao Youwen, Dong Zhiyuan, Yang Jun. Defects and Properties of Antimony-Doped ZnO Single Crystal[J]. Journal of Semiconductors, 2008, 29(10): 1988-1991.
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Zhang R, Zhang F, Zhao Y W, Dong Z Y, Yang J. Defects and Properties of Antimony-Doped ZnO Single Crystal[J]. J. Semicond., 2008, 29(10): 1988.
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Defects and Properties of Antimony-Doped ZnO Single Crystal
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Abstract
Sb-doped ZnO single crystal has been grown at 950℃ by the chemical vapor transport method.Compared to undoped ZnO,the Sb-doped ZnO single crystal is still n-type with an apparent increase of free electron concentration.X-ray photoelectron spectroscopy (XPS) measurement results suggest a possible occupation of the Zn site of the doped Sb in the ZnO single crystal,resulting in the formation of a donor.Blue emission is observed from the PL spectrum of the Sb doped ZnO single crystal,which is related with a shallow donor defect in ZnO.The results indicate that a high concentration of donor defects forms in ZnO after Sb doping at high temperature,making it difficult to obtain p-type material.-
Keywords:
- ZnO,
- single crystal,
- doping,
- defect
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References
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Proportional views
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