Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 28-32
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Growth Modes of InP Epilayers Grown by Solid Source Molecular Beam Epitaxy

Pi Biao, Shu Yongchun, Lin Yaowang, Xu Bo, Yao Jianghong, Xing Xiaodong, Qu Shengchun and Wang Zhanguo

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Abstract: The surface morphologies of InP epilayers grown by solid source molecular beam epitaxy at different growth temperatures and P/In flux ratios have been systematically studied by atomic force microscopy (AFM). The results show that the remarkable variety of surface morphologies of samples is related to the transition of growth mode。Under a critical growth condition，a transition of growth mode is induced between a two-dimensional (2D) growth mode and a three-dimensional (3D) growth mode.On the basis of these results，a summary phase diagram is proposed for the growth mode of InP epilayers.Under the 2D growth region，high quality InP epilayers are obtained.

Key words: SSMBE, InP, growth mode

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 28-32
      Pi Biao, Shu Yongchun, Lin Yaowang, Xu Bo, Yao Jianghong, Xing Xiaodong, Qu Shengchun, Wang Zhanguo. Growth Modes of InP Epilayers Grown by Solid Source Molecular Beam Epitaxy[J]. Journal of Semiconductors, 2007, 28(S1): 28-32. ****Pi B, Shu Y C, Lin Y W, Xu B, Yao J H, Xing X D, Qu S C, Wang Z G. Growth Modes of InP Epilayers Grown by Solid Source Molecular Beam Epitaxy[J]. Chin. J. Semicond., 2007, 28(S1): 28.
      Citation:
      Pi Biao, Shu Yongchun, Lin Yaowang, Xu Bo, Yao Jianghong, Xing Xiaodong, Qu Shengchun, Wang Zhanguo. Growth Modes of InP Epilayers Grown by Solid Source Molecular Beam Epitaxy[J]. Journal of Semiconductors, 2007, 28(S1): 28-32. ****
      Pi B, Shu Y C, Lin Y W, Xu B, Yao J H, Xing X D, Qu S C, Wang Z G. Growth Modes of InP Epilayers Grown by Solid Source Molecular Beam Epitaxy[J]. Chin. J. Semicond., 2007, 28(S1): 28.
      shu

      Growth Modes of InP Epilayers Grown by Solid Source Molecular Beam Epitaxy

      • Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics, Materials of the Ministry of Education，Nankai University，Tianjin 300457，China,Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics, Materials of the Ministry of Education，Nankai University，Tianjin 300457，China,Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics, Materials of the Ministry of Education，Nankai University，Tianjin 300457，China

      • Key Laboratory for Semiconductor Materials Science，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Key Laboratory for Semiconductor Materials Science，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics, Materials of the Ministry of Education，Nankai University，Tianjin 300457，China,Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics, Materials of the Ministry of Education，Nankai University，Tianjin 300457，China,Key Laboratory for Semiconductor Materials Science，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China and Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics, Materials of the Ministry of Education，Nankai University，Tianjin 300457，China

      • Key Laboratory for Semiconductor Materials Science，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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