Chin. J. Semicond. > 1981, Volume 2 > Issue 2 > 99-106
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P~+注入硅损伤层的椭圆偏振术研究

钱佑华 , 陈良尧 and 张继昌

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1981

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      Article Navigation >  Journal of Semiconductors  > 1981  >  2(2): 99-106
      钱佑华, 陈良尧, 张继昌. P~+注入硅损伤层的椭圆偏振术研究[J]. 半导体学报(英文版), 1981, 2(2): 99-106.
      Citation:
      钱佑华, 陈良尧, 张继昌. P~+注入硅损伤层的椭圆偏振术研究[J]. 半导体学报(英文版), 1981, 2(2): 99-106.
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      • Received Date: 2015-08-20

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