| Citation: |
Qiao Ming, Zhou Xianda, Duan Mingwei, Fang Jian, Zhang Bo, Li Zhaoji. Breakdown Characteristic of Multiregion Double RESURF LDMOS with High Voltage Interconnection[J]. Journal of Semiconductors, 2007, 28(9): 1428-1432.
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Qiao M, Zhou Xianda, Duan M W, Fang J, Zhang B, Li Z J. Breakdown Characteristic of Multiregion Double RESURF LDMOS with High Voltage Interconnection[J]. Chin. J. Semicond., 2007, 28(9): 1428.
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Breakdown Characteristic of Multiregion Double RESURF LDMOS with High Voltage Interconnection
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Abstract
A multiregion double RESURF LDMOS with a high voltage interconnection of over 600V is experimentally realized.Using the effects of a junction termination extension of the P-top layer and the curvature of a circular structure,the breakdown voltage of the lateral high voltage device is improved by spreading the depletion region.Two- and three-dimensional simulation results are presented.The breakdown voltage of the LDMOS with high voltage interconnection is not exact in the two-dimensional simulation.In agreement with the 3D simulation,the experimental results show that the breakdown voltage of the LDMOS,which depends strongly on the concentration of the P-top layer,will increase with the reduction of the width of the high voltage interconnection.When the width is 30μm,the breakdown voltage is 640V without adding additional masks or process steps.As a result,the structure can be used in conventional level shifting and high voltage junction isolation termination for high voltage applications.-
Keywords:
- HVI,
- multiregion,
- double RESURF,
- LDMOS,
- breakdown voltage
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References
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Proportional views
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