Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT

Xue Lijun; Xia Yang; Liu Ming; Wang Yan; Shao Xue; Lu Jing; Ma Jie; Xie Changqing; Yu Zhiping

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Article Navigation > Journal of Semiconductors > 2006 > 27(2): 298-303

Xue Lijun, Xia Yang, Liu Ming, Wang Yan, Shao Xue, Lu Jing, Ma Jie, Xie Changqing, Yu Zhiping. Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2006, 27(2): 298-303. ****Xue L J, Xia Y, Liu M, Wang Y, Shao X, Lu J, Ma J, Xie C Q, Yu Z P. Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT[J]. Chin. J. Semicond., 2006, 27(2): 298.

Citation:

Xue Lijun, Xia Yang, Liu Ming, Wang Yan, Shao Xue, Lu Jing, Ma Jie, Xie Changqing, Yu Zhiping. Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2006, 27(2): 298-303. ****

Xue L J, Xia Y, Liu M, Wang Y, Shao X, Lu J, Ma J, Xie C Q, Yu Z P. Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT[J]. Chin. J. Semicond., 2006, 27(2): 298.

Citation:

Xue L J, Xia Y, Liu M, Wang Y, Shao X, Lu J, Ma J, Xie C Q, Yu Z P. Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT[J]. Chin. J. Semicond., 2006, 27(2): 298.

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Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT

Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
Institute of Microelectronics,Tsinghua University,Beijing 100084,China
Institute of Microelectronics,Tsinghua University,Beijing 100084,China
Institute of Microelectronics,Tsinghua University,Beijing 100084,China
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
Institute of Microelectronics,Tsinghua University,Beijing 100084,China

Received Date: 2015-08-20

Abstract

Abstract

AlGaN/GaN HEMTs are investigated by numerical simulation from the self-consistent solution of Schrdinger-Poisson-hydrodynamic (HD) systems.The influences of polarization charge and quantum effects are considered in this model.Then the two-dimensional conduction band and electron distribution,electron temperature characteristics,Id versus Vd and Id versus Vg,transfer characteristics and transconductance curves are obtained.Corresponding analysis and discussion based on the simulation results are subsequently given.
- AlGaN/GaN HEMT,
- 2D modeling and simulation,
- polarization charges,
- quantum effects

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