| Citation: |
Li Zehong, Zhou Chunhua, Hu Yonggui, Liu Yong, Zhang Bo, Xu Shiliu. ESD Transient Model of Vertical DMOS Power Devices[J]. Journal of Semiconductors, 2008, 29(10): 2014-2017.
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Li Z H, Zhou C H, Hu Y G, Liu Y, Zhang B, Xu S L. ESD Transient Model of Vertical DMOS Power Devices[J]. J. Semicond., 2008, 29(10): 2014.
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ESD Transient Model of Vertical DMOS Power Devices
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Abstract
Based on the equivalent circuit of VDMOS,the initial condition and transient response process are analyzed and the ESD transient model of the power VDMOS device is obtained.Results show that the ESD transient discharge process is correctly depicted with this model,which resolves the problem of the insufficient initial conditions of other models.Based on this model,the relationships between ESD threshold voltage and gate input protection series resistance,breakdown voltage,and parasitic dynamic resistance of the Zener diodes,and gate-source capacitance and gate oxide thickness of the power VDMOS,are obtained.This model can guide the design of ESD protection for power VDMOSs-
Keywords:
- VDMOS,
- ESD,
- equivalent circuit,
- initial condition,
- transient model
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References
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Proportional views
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