Chin. J. Semicond. > 1985, Volume 6 > Issue 6 > 641-647
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高浓度注砷和注锑硅的连续氩离子激光退火研究

钱佩信 , 林惠旺 , 陆永枫 and 李冬梅

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(6): 641-647
      钱佩信, 林惠旺, 陆永枫, 李冬梅. 高浓度注砷和注锑硅的连续氩离子激光退火研究[J]. 半导体学报(英文版), 1985, 6(6): 641-647.
      Citation:
      钱佩信, 林惠旺, 陆永枫, 李冬梅. 高浓度注砷和注锑硅的连续氩离子激光退火研究[J]. 半导体学报(英文版), 1985, 6(6): 641-647.
      shu

      • Received Date: 2015-08-20

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