| Citation: |
Liu Linsheng, Liu Su, Wang Wenxin, Zhao Hongming, Liu Baoli, Gao Hanchao, Jiang Zhongwei, Wang Jia, Huang Qing'an, Chen Hong, Zhou Junming. Study of Electron Spin Relaxation Time in GaAs (110) Quantum Wells[J]. Journal of Semiconductors, 2007, 28(6): 856-859.
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Liu L S, Liu S, Wang W X, Zhao H M, Liu B L, Gao H C, Jiang Z W, Wang J, Huang Q, Chen H, Zhou J M. Study of Electron Spin Relaxation Time in GaAs (110) Quantum Wells[J]. Chin. J. Semicond., 2007, 28(6): 856.
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Study of Electron Spin Relaxation Time in GaAs (110) Quantum Wells
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Abstract
GaAs/AlGaAs (110) multiple quantum wells (MQWs) were grown by solid source molecular beam epitaxy (MBE) with a valved arsenic cracker cell. The optical properties of the undoped GaAs (110) MQWs were studied by low-temperature photoluminescence and time-resolved photoluminescence (TRPL), which show that a strong electron spin relaxation dynamic is dependent on the excitation power and wavelength at room temperature. In this material, the predominant spin scattering mechanism ［D'yakonov-Perel' (DP) mechanism］ for conventional (100) QWs is substantially suppressed. The experiment data indicate that the electron-hole exchange interaction has a great impact on the spin relaxation time in GaAs (110) MQWs at room temperature. -
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