Chin. J. Semicond. > 2002, Volume 23 > Issue 3 > 290-295
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开态热载流子应力下的n-MOSFETs的氧化层厚度效应(英文)

胡靖 , 穆甫臣 , 许铭真 and 谭长华

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Key words: HCI, 热载流子效应, 氧化层厚度效应, 寿命预测模型, 器件可靠性

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(3): 290-295
      胡靖, 穆甫臣, 许铭真, 谭长华. 开态热载流子应力下的n-MOSFETs的氧化层厚度效应(英文)[J]. 半导体学报(英文版), 2002, 23(3): 290-295.
      Citation:
      胡靖, 穆甫臣, 许铭真, 谭长华. 开态热载流子应力下的n-MOSFETs的氧化层厚度效应(英文)[J]. 半导体学报(英文版), 2002, 23(3): 290-295.
      shu

      • Received Date: 2015-08-19

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