Chin. J. Semicond. > 2004, Volume 25 > Issue 11 > 1381-1385
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多晶硅、单晶硅同步外延研究(英文)

胡冬青 , 李思渊 and 王永顺

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Key words: 同步外延, 成核, 化学气相淀积

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(11): 1381-1385
      胡冬青, 李思渊, 王永顺. 多晶硅、单晶硅同步外延研究(英文)[J]. 半导体学报(英文版), 2004, 25(11): 1381-1385.
      Citation:
      胡冬青, 李思渊, 王永顺. 多晶硅、单晶硅同步外延研究(英文)[J]. 半导体学报(英文版), 2004, 25(11): 1381-1385.
      shu

      • Received Date: 2015-08-19

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