Chin. J. Semicond. > 1983, Volume 4 > Issue 6 > 531-539
|

CONTENTS

深中心行为图形表示方法的探讨

阮圣央 , 张砚华 , 郑秉茹 , 杨锡权 and 吉秀江

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2370 Times PDF downloads: 621 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 June 1983

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1983  >  4(6): 531-539
      阮圣央, 张砚华, 郑秉茹, 杨锡权, 吉秀江. 深中心行为图形表示方法的探讨[J]. 半导体学报(英文版), 1983, 4(6): 531-539.
      Citation:
      阮圣央, 张砚华, 郑秉茹, 杨锡权, 吉秀江. 深中心行为图形表示方法的探讨[J]. 半导体学报(英文版), 1983, 4(6): 531-539.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return