Chin. J. Semicond. > 2003, Volume 24 > Issue 10 > 1044-1048
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纤锌矿GaN低场电子迁移率解析模型

张进城 , 马晓华 , 郝跃 , 范隆 and 李培咸

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Key words: GaN, 电子迁移率, 解析模型

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(10): 1044-1048
      张进城, 马晓华, 郝跃, 范隆, 李培咸. 纤锌矿GaN低场电子迁移率解析模型[J]. 半导体学报(英文版), 2003, 24(10): 1044-1048.
      Citation:
      张进城, 马晓华, 郝跃, 范隆, 李培咸. 纤锌矿GaN低场电子迁移率解析模型[J]. 半导体学报(英文版), 2003, 24(10): 1044-1048.
      shu

      • Received Date: 2015-08-20

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