Chin. J. Semicond. > 1995, Volume 16 > Issue 2 > 118-124
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不同生长温度下Ge_（0．5）Si_（0．5）／Si应变层超晶格材料结构的X射线双晶衍射研究

朱南昌，陈京一，李润射，许顺生，周国良，张翔九，俞鸣人

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(2): 118-124
      朱南昌，陈京一，李润射，许顺生，周国良，张翔九，俞鸣人. 不同生长温度下Ge_（0．5）Si_（0．5）／Si应变层超晶格材料结构的X射线双晶衍射研究[J]. 半导体学报(英文版), 1995, 16(2): 118-124.
      Citation:
      朱南昌，陈京一，李润射，许顺生，周国良，张翔九，俞鸣人. 不同生长温度下Ge_（0．5）Si_（0．5）／Si应变层超晶格材料结构的X射线双晶衍射研究[J]. 半导体学报(英文版), 1995, 16(2): 118-124.
      shu

      • Received Date: 2015-08-19

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