Chin. J. Semicond. > 1994, Volume 15 > Issue 3 > 204-207
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利用电子束掺杂技术制备微米、亚微米P－MOSFET器件

李秀琼，海潮和，杨军

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    Received: 18 August 2015 Revised: Online: Published: 01 March 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(3): 204-207
      李秀琼，海潮和，杨军. 利用电子束掺杂技术制备微米、亚微米P－MOSFET器件[J]. 半导体学报(英文版), 1994, 15(3): 204-207.
      Citation:
      李秀琼，海潮和，杨军. 利用电子束掺杂技术制备微米、亚微米P－MOSFET器件[J]. 半导体学报(英文版), 1994, 15(3): 204-207.
      shu

      • Received Date: 2015-08-18

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