Chin. J. Semicond. > 1992, Volume 13 > Issue 12 > 736-741
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用数值法分析TF-SOI-MOS管沟道区的电势分布

汤庭鳌 , 郑大卫 , 黄宜平 and C.A.Paz de Araujo

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(12): 736-741
      汤庭鳌, 郑大卫, 黄宜平, C.A.Paz de Araujo. 用数值法分析TF-SOI-MOS管沟道区的电势分布[J]. 半导体学报(英文版), 1992, 13(12): 736-741.
      Citation:
      汤庭鳌, 郑大卫, 黄宜平, C.A.Paz de Araujo. 用数值法分析TF-SOI-MOS管沟道区的电势分布[J]. 半导体学报(英文版), 1992, 13(12): 736-741.
      shu

      • Received Date: 2015-08-19

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