Chin. J. Semicond. > 1996, Volume 17 > Issue 5 > 360-364
|

CONTENTS

B离子在n（Si）－GaAs层中的化学补偿效应

刘伊犁，罗晏，李国辉，姬成周

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2337 Times PDF downloads: 1023 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 May 1996

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1996  >  17(5): 360-364
      刘伊犁，罗晏，李国辉，姬成周. B离子在n（Si）－GaAs层中的化学补偿效应[J]. 半导体学报(英文版), 1996, 17(5): 360-364.
      Citation:
      刘伊犁，罗晏，李国辉，姬成周. B离子在n（Si）－GaAs层中的化学补偿效应[J]. 半导体学报(英文版), 1996, 17(5): 360-364.
      shu

      • Received Date: 2015-08-18

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return