| Citation: |
Cai Shuicheng, Wang Zhigong, Gao Jianjun, Zhu En. Analysis and Design of 10Gb/s,0.2μm GaAs PHEMTTrans-Impedance Amplifiers[J]. Journal of Semiconductors, 2006, 27(10): 1808-1813.
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Cai S C, Wang Z G, Gao J J, Zhu E. Analysis and Design of 10Gb/s,0.2μm GaAs PHEMTTrans-Impedance Amplifiers[J]. Chin. J. Semicond., 2006, 27(10): 1808.
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Analysis and Design of 10Gb/s,0.2μm GaAs PHEMTTrans-Impedance Amplifiers
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Abstract
A 10Gb/s low noise preamplifier based on a 0.2μm GaAs PHEMT is theoretically analyzed,simulated,and taped out for verification.A common-source topology is adopted to reduce the noise and enhance the sensitivity.The test results show that under a single supply voltage of 3.3V,the preamplifier has a trans-impedance of 57.8dB·Ω with a bandwidth of over 10GHz.The chip’s area is 0.5mm×0.4mm.According to the test results the preamplifier can operate well at 10Gb/s.-
Keywords:
- PHEMT,
- trans-impedance,
- noise
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References
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Proportional views
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