Chin. J. Semicond. > 2000, Volume 21 > Issue 7 > 682-685
|

CONTENTS

弛豫SiGe外延层的UHV/CVD生长

罗广礼 , 林小峰 , 刘志农 , 陈培毅 , 林惠旺 , 钱佩信 and 刘安生

+ Author Affiliations

PDF

Key words: 外延层, UHV/CVD, SiGe

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2834 Times PDF downloads: 1207 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 July 2000

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2000  >  21(7): 682-685
      罗广礼, 林小峰, 刘志农, 陈培毅, 林惠旺, 钱佩信, 刘安生. 弛豫SiGe外延层的UHV/CVD生长[J]. 半导体学报(英文版), 2000, 21(7): 682-685.
      Citation:
      罗广礼, 林小峰, 刘志农, 陈培毅, 林惠旺, 钱佩信, 刘安生. 弛豫SiGe外延层的UHV/CVD生长[J]. 半导体学报(英文版), 2000, 21(7): 682-685.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return