Chin. J. Semicond. > 2004, Volume 25 > Issue 8 > 951-955
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氮对直拉硅片中氧沉淀分布的影响

崔灿 , 杨德仁 , 马向阳 , 余学功 , 李立本 and 阙端麟

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Key words: 掺氮, 直拉硅, 氧沉淀, 退火

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    Received: 19 August 2015 Revised: Online: Published: 01 August 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(8): 951-955
      崔灿, 杨德仁, 马向阳, 余学功, 李立本, 阙端麟. 氮对直拉硅片中氧沉淀分布的影响[J]. 半导体学报(英文版), 2004, 25(8): 951-955.
      Citation:
      崔灿, 杨德仁, 马向阳, 余学功, 李立本, 阙端麟. 氮对直拉硅片中氧沉淀分布的影响[J]. 半导体学报(英文版), 2004, 25(8): 951-955.
      shu

      • Received Date: 2015-08-19

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