Chin. J. Semicond. > 2001, Volume 22 > Issue 9 > 1131-1134
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氧气中退火Ge-SiO_2共溅射薄膜的强紫光发射

沈今楷 , 吴兴龙 , 袁仁宽 , 谭超 and 鲍希茂

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Key words: 光致发光, 磁控溅射, 傅里叶变换红外吸收谱

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(9): 1131-1134
      沈今楷, 吴兴龙, 袁仁宽, 谭超, 鲍希茂. 氧气中退火Ge-SiO_2共溅射薄膜的强紫光发射[J]. 半导体学报(英文版), 2001, 22(9): 1131-1134.
      Citation:
      沈今楷, 吴兴龙, 袁仁宽, 谭超, 鲍希茂. 氧气中退火Ge-SiO_2共溅射薄膜的强紫光发射[J]. 半导体学报(英文版), 2001, 22(9): 1131-1134.
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      • Received Date: 2015-08-20

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