| Citation: |
Bi Xiaojun, Zhang Haiying, Chen Liqiang, Huang Qinghua. A Monolithic InGaP/GaAs HBT PA for TD-SCDMA Handset Application[J]. Journal of Semiconductors, 2008, 29(10): 1868-1872.
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Bi X J, Zhang H Y, Chen L Q, Huang Q H. A Monolithic InGaP/GaAs HBT PA for TD-SCDMA Handset Application[J]. J. Semicond., 2008, 29(10): 1868.
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A Monolithic InGaP/GaAs HBT PA for TD-SCDMA Handset Application
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Abstract
This paper demonstrates the design and fabrication of a monolithic HBT power amplifier for TD-SCDMA cellular phones that achieves high efficiency and linearity.The two-stage MMIC integrates the input matching circuits,inter-stage matching circuits,and active bias circuits in a single chip with size as small as 0.91mm×0.98mm.The amplifier obtains a power-added efficiency of 43% (15%) and a gain of 28.5dB (24dB) at the high and low operation mode under the 3.4V supply.In addition,the adjacent channel leakage power is below -45dBc/-56dBc and -39dBc/-50dBc at 1.6MHz/3.2MHz offset in low and high power output modes,respectively,with QPSK modulation.The MMIC offers the potential for low cost production due to small chip size,stable voltage supply,and high performance at the same time.-
Keywords:
- TD-SCDMA,
- power amplifier,
- InGaP/GaAs HBT,
- PAE,
- ACPR
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References
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Proportional views
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