Chin. J. Semicond. > 2003, Volume 24 > Issue 1 > 39-43
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表面应力诱导InGaN量子点的生长及其性质

李昱峰 , 韩培德 , 陈振 , 黎大兵 and 王占国

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Key words: InGaN, 量子点, MOCVD

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(1): 39-43
      李昱峰, 韩培德, 陈振, 黎大兵, 王占国. 表面应力诱导InGaN量子点的生长及其性质[J]. 半导体学报(英文版), 2003, 24(1): 39-43.
      Citation:
      李昱峰, 韩培德, 陈振, 黎大兵, 王占国. 表面应力诱导InGaN量子点的生长及其性质[J]. 半导体学报(英文版), 2003, 24(1): 39-43.
      shu

      • Received Date: 2015-08-20

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