Design,Fabrication,and Characterization of Dual Channel Real Space Transfer Transistors

Guo Weilian; Zhang Shilin; Liang Huilai; Qi Haitao; Mao Luhong; Niu Pingjuan; Yu Xin; Wang Wei; Wang Wenxin; Chen Hong; Zhou Junming

Article Navigation > Journal of Semiconductors > 2008 > 29(1): 136-139

Guo Weilian, Zhang Shilin, Liang Huilai, Qi Haitao, Mao Luhong, Niu Pingjuan, Yu Xin, Wang Wei, Wang Wenxin, Chen Hong, Zhou Junming. Design,Fabrication,and Characterization of Dual Channel Real Space Transfer Transistors[J]. Journal of Semiconductors, 2008, 29(1): 136-139. ****Guo W L, Zhang S L, Liang H L, Qi H T, Mao L H, Niu P J, Yu X, Wang W, Wang W X, Chen H, Zhou J M. Design,Fabrication,and Characterization of Dual Channel Real Space Transfer Transistors[J]. J. Semicond., 2008, 29(1): 136.

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Guo W L, Zhang S L, Liang H L, Qi H T, Mao L H, Niu P J, Yu X, Wang W, Wang W X, Chen H, Zhou J M. Design,Fabrication,and Characterization of Dual Channel Real Space Transfer Transistors[J]. J. Semicond., 2008, 29(1): 136.

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Design,Fabrication,and Characterization of Dual Channel Real Space Transfer Transistors

School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,China
School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,China
School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,China
Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China
Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China
Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China

Received Date: 2015-08-18
Accepted Date: 2007-06-17
Revised Date: 2007-07-30
Published Date: 2007-12-26

Abstract

Abstract

By adopting a dual channel structure and a GaAs substrate,a real space transfer transistor is successfully designed and fabricated.It has the standard "Λ" shaped negative resistance I-V characteristics as well as the level and smooth valley region of a conventional RSTT.The negative resistance parameters can be varied by changing the gate voltage.For example,the PVCR varies from 2.1 to 10.6V while VGS changes from 0.6 to 1.0V.The transconductance for IP (ΔIP/ΔVGS) is 0.3mS.The parameters VP and VV,and the threshold gate voltage for negative resistance characteristics are smaller than the values reported in the literatures.This device is suitable for low dissipation power application.
- RSTT,
- high speed compound three terminal function device,
- three terminal negative resistance device,
- hot electron device,
- electron transfer device

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