Chin. J. Semicond. > 1990, Volume 11 > Issue 5 > 323-331

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超晶格(Ge_2)_1/(GaAs)_m(110)(m=1-20)的电子能带结构研究

徐至中

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(5): 323-331
      徐至中. 超晶格(Ge_2)_1/(GaAs)_m(110)(m=1-20)的电子能带结构研究[J]. 半导体学报(英文版), 1990, 11(5): 323-331.
      Citation:
      徐至中. 超晶格(Ge_2)_1/(GaAs)_m(110)(m=1-20)的电子能带结构研究[J]. 半导体学报(英文版), 1990, 11(5): 323-331.
      shu

      • Received Date: 2015-08-19

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