Chin. J. Semicond. > 1995, Volume 16 > Issue 6 > 434-438
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MBE－GaAs／Si材料晶体质量对少子扩散长度的影响

胡雨生，汪乐

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(6): 434-438
      胡雨生，汪乐. MBE－GaAs／Si材料晶体质量对少子扩散长度的影响[J]. 半导体学报(英文版), 1995, 16(6): 434-438.
      Citation:
      胡雨生，汪乐. MBE－GaAs／Si材料晶体质量对少子扩散长度的影响[J]. 半导体学报(英文版), 1995, 16(6): 434-438.
      shu

      • Received Date: 2015-08-19

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