Chin. J. Semicond. > 1989, Volume 10 > Issue 2 > 132-140
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氧离子注入硅SOI结构的椭偏谱研究

梁中宁 , 莫党 and 卢殿通

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(2): 132-140
      梁中宁, 莫党, 卢殿通. 氧离子注入硅SOI结构的椭偏谱研究[J]. 半导体学报(英文版), 1989, 10(2): 132-140.
      Citation:
      梁中宁, 莫党, 卢殿通. 氧离子注入硅SOI结构的椭偏谱研究[J]. 半导体学报(英文版), 1989, 10(2): 132-140.
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      • Received Date: 2015-08-19

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